METHOD OF SILICON PLATE SURFACE PROCESSING Russian patent published in 2009 - IPC H01L21/306 

Abstract RU 2352021 C1

FIELD: electrics.

SUBSTANCE: method of silicon plate surface processing involves plate loading into bath filled by isopropyl alcohol and dirt cleaning at 25±5 Hz ultrasound frequency for 5±1 minutes. Control is performed under focused light by the number of luminescent points. Number of luminescent points should be below 5.

EFFECT: complete removal of dirt, prevention of silicon plate damage, chipping and fracture.

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RU 2 352 021 C1

Authors

Ismailov Tagir Abdurashidovich

Shakhmaeva Ajshat Rasulovna

Shangereeva Bijke Alievna

Dates

2009-04-10Published

2007-07-16Filed