FIELD: electrics.
SUBSTANCE: method of silicon plate surface processing involves plate loading into bath filled by isopropyl alcohol and dirt cleaning at 25±5 Hz ultrasound frequency for 5±1 minutes. Control is performed under focused light by the number of luminescent points. Number of luminescent points should be below 5.
EFFECT: complete removal of dirt, prevention of silicon plate damage, chipping and fracture.
Title | Year | Author | Number |
---|---|---|---|
METHOD FOR PRODUCING MASK TEMPLATES | 2005 |
|
RU2308179C1 |
PROCESSING OF SILICON SUBSTRATE | 2013 |
|
RU2587096C2 |
METHOD FOR REMOVING RESISTIVE MASK | 2005 |
|
RU2318267C2 |
METHOD FOR PROCESSING REVERSE SIDE OF SILICON TRANSISTOR STRUCTURE | 2023 |
|
RU2815294C1 |
METHOD OF PHOTO-TEMPLATE STOCKS PRODUCTION | 2006 |
|
RU2329565C1 |
METHOD OF TREATING SURFACE OF (111) ORIENTED MONOCRYSTALLINE SILICON | 2012 |
|
RU2501057C1 |
STRUCTURE FORMATION METHOD FOR INTEGRATED CIRCUITS WITH INSULATED COMPONENTS | 1991 |
|
RU2035805C1 |
METHOD FOR PRE-EPITAXIAL TREATMENT OF SURFACE OF GERMANIUM SUBSTRATE | 2013 |
|
RU2537743C1 |
METHOD FOR PRODUCING STRUCTURES FOR INTEGRATED CIRCUITS WITH DIELECTRIC INSULATION | 1992 |
|
RU2022405C1 |
METHOD OF PHOTORESIST REMOVAL | 2007 |
|
RU2352020C1 |
Authors
Dates
2009-04-10—Published
2007-07-16—Filed