FIELD: physics, semiconductors.
SUBSTANCE: invention is related to technology for manufacture of semiconductor instruments and integrated circuits, in particular, to preparation of silicon plate surfaces prior to application of polyimide. Substance of invention: in method for treatment of plate surface prior to application of polyimide, treatment of silicon plate surface prior to application of polyimide is carried out in etchant that consists of hydrofluoric acid and acetone, at the following ratio of components: HF: CH3COCH3 = 1:100, time of silicon plate surface processing is equal to not more than 30 seconds at room temperature, number of dust specks makes 3 pieces.
EFFECT: provides for complete removal of different admixtures from surface of silicon plates, proper adhesion of polyimide to plate, reduction of temperature and time required for plate processing.
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