METHOD FOR REMOVING RESISTIVE MASK Russian patent published in 2008 - IPC H01L21/306 G03F7/26 

FIELD: manufacturing semiconductor devices including removal of resistive mask from silicon wafer surfaces upon photolithographic operations.

SUBSTANCE: proposed method for removing resistive mask includes silicon wafer treatment upon photolithographic operations to remove photoresist from surface; treatment is conducted in two stages; first stage includes treatment in sulfuric acid (H₂SO₄) and hydrogen peroxide (H₂O₂) solution of 3 : 1 proportion at temperature T = 125 °C for 5 minutes; second stage includes washing first in warm deionized water (H₂O) at T = 65-70 °C for 5 minutes followed by washing in two baths, each having spillover points in four sides, at water flowrate of 400 l/h and wash time of 5 minutes in each bath; wafers are checked for adequate cleaning by focused incident light beam at maximum six luminous points.

EFFECT: reduced number of operations required to remove resistive mask, ability of attaining clean surfaces free from photolithographic contaminants.

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