FIELD: chemistry.
SUBSTANCE: invention relates to the technology of manufacturing semiconductor devices and integrated circuits, particularly to methods of treating fluoroplastic objects after manufacturing operations. The method involves treating fluoroplastic objects after manufacturing operations to remove different contaminants and resistive layers. Treatment is done in two stages, at the first stage in a solution of sulphuric acid (H2SO4) and hydrogen peroxide (H2O2) in ratio of 1:1 at temperature T=140±5°C for 5 minutes, and at the second stage by washing in warm deionised water (H2O) at temperature T=65-70°C for 5 minutes. Further washing is done in two baths with overflow on four sides, with rate of water flow of 450±50 l/h, washing time of 5 minutes in each bath. Purification is controlled under a focused beam of light, and the number of flashing dots does not exceed 5.
EFFECT: complete removal of contaminants and resistive layers from fluoroplastic objects.
5 ex
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Authors
Dates
2009-09-27—Published
2008-07-17—Filed