FLASH MEMORY ELEMENT FOR ELECTRICALLY PROGRAMMABLE READ-ONLY MEMORY Russian patent published in 2009 - IPC H01L29/78 G11C16/04 

FIELD: information technology.

SUBSTANCE: flash memory element for electrically programmable read-only memory is meant for data storage when power is off. On a semiconductor base with a source and drain between the latter, there is a tunnelling layer, an auxiliary tunnelling layer, a memory layer, blocking layer and a switch. The auxiliary tunnelling and blocking layers are made from material with high dielectric permeability, from 5 to 2000, exceeding the dielectric permeability of the material of the tunnelling layer made from SiO₂.

EFFECT: as a result there is reduction of voltage (4 V) and time (10^-7 s) for recording/erasing information and increase in data storage time (up to 12 years).

7 cl, 1 dwg