FIELD: physics, computer engineering.
SUBSTANCE: invention is related to computer engineering. Flash element of electrically alterable read-only memory is designed for storage of information in case of disconnected power supply. On semiconductor substrate between source and drain there are tunnel layer, additional tunnel layer, memorising layer, blocking layer and gate. Besides additional tunnel and blocking layers are made of material with high value of dielectric permeability, from 5 to 2000, exceeding dielectric permeability of tunnel layer material (made of SiO2). Memorising layer is made in the form of conducting nanoclusters matrix with size from 1.0 to 50 nm.
EFFECT: reduced effect of conducting pores in tunnel oxide at charge storage, increase of memory window (up to 7 V), possibility to inject positive and negative charge, reduced time (down to 10-7 s) for recording / erasure of information, increased time for information storage (up to 12 years).
9 cl, 1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| FLASH MEMORY ELEMENT FOR ELECTRICALLY PROGRAMMABLE READ-ONLY MEMORY | 2008 |
|
RU2357324C1 |
| FLASH MEMORY ELEMENT FOR ELECTRICALLY PROGRAMMABLE READ-ONLY MEMORY | 2015 |
|
RU2584728C1 |
| FLASH MEMORY ELEMENT FOR ELECTRICALLY PROGRAMMABLE READ-ONLY MEMORY | 2008 |
|
RU2381575C1 |
| FLASH ELEMENT OF MEMORY | 2013 |
|
RU2546201C2 |
| FLASH MEMORY ELEMENT FOR ELECTRICALLY REPROGRAMMABLE READ-ONLY MEMORY | 2009 |
|
RU2403631C1 |
| FLASH MEMORY ELEMENT FOR ELECTRICALLY PROGRAMMABLE READ-ONLY MEMORY | 2009 |
|
RU2402083C1 |
| MEMORY DEVICE WITH DIELECTRIC LAYER BASED ON DIELECTRIC FILMS AND METHOD OF ITS PRODUCING | 2006 |
|
RU2343587C2 |
| FLASH MEMORY ELEMENT OF AN ELECTRICALLY REPROGRAMMABLE PERMANENT MEMORY DEVICE | 2006 |
|
RU2310929C1 |
| MEMORY ELEMENT FOR ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY | 2005 |
|
RU2287865C1 |
| MEMORY GATE FOR READ-ONLY MEMORY UNIT | 1981 |
|
SU1012704A1 |
