PIXEL FUNCTIONAL AND INTEGRATED STRUCTURE OF DETECTOR Russian patent published in 2009 - IPC H01L31/115 

FIELD: electronics.

SUBSTANCE: invention relates to micro electronics, and particularly, to production of array detector of relativistic particles. The most sensible detectors of relativistic particles are pixel structures made up from bipolar transistor. The technical result of the invention provides for increasing density of pixel structures composition in relativistic particles detectors due to functional integration of amplifying transistor structure and sensing element i.e. voltage-radiation type transmitter and simplifying relativistic particles detectors manufacturing technology. The above-mentioned result is achieved by the fact that pixel functional and integrated structure of relativistic particles detector contains bipolar n-p-n\p-n-p\- type transistor structure in its substrate. The basis of this structure is connected to the common bus via resistor. Collector zone is coupled with power supply line, while emitter zone - with output electrode. The pixel functional and integrated structure of relativistic particles detector is specific by p-i-n diode with p\n\-type conductivity zone being combined with\ connected with \ transistor basic zone. The i - type conductivity zone is combined with substrate having ohmic contact of n⁺ - \p\ type conductivity coupled with additional source of voltage.

EFFECT: high density of pixel structures composition in relativistic particles detectors.

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