SEMICONDUCTOR DEVICE WITH A CONTROLLED DROPPING SECTION OF INDUCED VOLT-CURRENT CHARACTERISTICS Russian patent published in 2023 - IPC H01L29/82 

FIELD: semiconductor devices.

SUBSTANCE: semiconductor device with a controlled falling section of the induced current-voltage characteristic refers to devices with negative volume resistance (devices based on the Gunn effect) used as new types of active electronic structures based on the volume nonlinear effects of the main charge carriers in semiconductors of type A^IIIB^V operating under conditions of strong external influences of electric and magnetic fields. The device has applications as a microwave wavelength generator or as an autodyne converter operating in these ranges. Possibility of creating a new class of generators and frequency converters that can provide high efficiency, due to the use of an orthogonal induction drift characteristic in the transverse direction, in which the Gunn effect field strength is two times smaller than in the longitudinal direction of the carrier drift.

EFFECT: technical result is achieved by the fact that semiconductor structure is semiconductors of type A^IIIB^V, and the source of the magnetic field is a permanent magnet with magnetic induction В≥4 Т.

1 cl, 4 dwg