IONIZING RADIATION DETECTOR Russian patent published in 2002 - IPC

FIELD: recording charged particles and gamma-quanta. SUBSTANCE: detector is made of high- resistance semiconductor of ν,π or i types and has cathode of p-type semiconductor, anode of n-type semiconductor, and respective ohmic contacts. Anode is made in the form of strip with two ohmic contacts deposited on two sides of said strip and beyond active region of detector; part of n-type strip also located beyond active region of detector has narrower sectional area and is made of Gunn-effect semiconductor such as gallium arsenide; voltage of polarity sufficient to make electrons arriving at anode move to narrower part of strip is applied to first and second ohmic contacts of anode. EFFECT: enhanced output signal. 1 dwg