METHOD FOR PREPARATION OF InSb SUBSTRATE SURFACE FOR HETEROSTRUCTURE GROWING USING MBE Russian patent published in 2017 - IPC H01L21/3105 

FIELD: physics.

SUBSTANCE: invention relates to the semiconductor manufacture technology - for manufacture of focal diode photodetector arrays on InSb substrates. The method for preparation of the InSb substrate surface for heterostructure growing using MBE invlovs preliminary processing of the InSb substrate surface with modification of the oxide layer composition to provide further complete removal of oxides. Oxide layer composition is modified by exposing the substrate to a liquid medium with pH less than two. That provides dilution of most indium oxides and surface saturation with highly volatile antimony oxides. After oxide layer modification, the remaining oxide layer is removed in a vacuum chamber of the molecular beam epitaxy unit using heat treatment and antimony stream delivery to the substrate surface.

EFFECT: invention provides adherence to vacuum hygiene during growing of structures layers, eliminates the possibility of contamination of the InSb substrate surface, reduces roughness occurring during substrate surface preparation, provides the desired smoothness.

6 cl, 2 dwg