METHOD OF PRODUCING NANOHETEROSTRUCTURE WITH SUPERLATTICE Russian patent published in 2017 - IPC H01L31/18 B82B3/00 

FIELD: nanotechnology.

SUBSTANCE: invention relates to electronic engineering, in particular, to methods of creating nanoheterostructures for phototransforming and light-emitting devices. The method of nanoheterostructures with superlattice manufacturing includes growing at GaSb substrate by vapor phase epitaxy from organometallic compounds in the superlattice hydrogen stream, consisting of alternating layers of GaSb and InAs. The superlattice includes at least one layer of the GaSb, growing from triethylgallium and trimethylantimony, and at least one layer of InAs, growing from trimethylindium and arsenic hydride. When growing the GaSb layer, at first supply triethylgallium and then trimethylantimony, when growing InAs layer at first supply arsenic hydride, and then trimethylindium. After growing of each layer GaSb or InAs, stop the supply of mentioned compounds to the layers growth area and continue to apply hydrogen for a period of time t, given by a certain ratio. In this way of nanoheterostructures with superlattice production there is no film of variable composition at the heteroboundary between the superlattice layers.

EFFECT: invention provides stability and reproducibility of the electro-optical properties, created on the basis of nanoheterostructures of phototransforming and light-emitting devices.

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