FIELD: physics; conductors.
SUBSTANCE: invention relates to the technology of making semiconductor devices, particularly to methods of preparing semiconductor substrate surfaces to photolithographic procedures. The semiconductor substrate surfaces are prepared through treatment with hexamethyldisiloxane vapour at room temperature for 5 seconds at centrifuge revolution speed of 200±50 min-1 and rate of flow of hexamethyldisiloxane vapour of 60 l/h. The contact angle of water on the substrate after treatment equals θ'=37.2±0.376θ, with θ - is the contact angle of water on the substrate before treatment.
EFFECT: complete removal of moisture from the surface of silicon substrates before photoresist coating at room temperature.
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