METHOD FOR SELECTIVELY DEPOSITING A POLYCRYSTALLINE DIAMOND COATING ON SILICON BASES Russian patent published in 2018 - IPC C23C16/04 C23C16/27 B82Y30/00 

FIELD: electrical engineering.

SUBSTANCE: invention relates to semiconductor thin-film technologies and can be used in micro- and nanoelectronics, photonics and microwave electronics. Method for selectively depositing a polycrystalline diamond coating onto a silicon base includes mixing a positive photoresist with diamond particles and applying the resulting mixture to the surface of the silicon base in the form of a film, followed by an ultraviolet action, etching of an unpolymerized photoresist with diamond particles and selective precipitation of a polycrystalline diamond coating by gas-phase deposition. As diamond particles diamond nanoparticles are used, size of which is selected from the range of 3–100 nm, before deposition of the polycrystalline diamond coating, reactive ion etching of the silicon base with a photoresist pattern applied to a depth exceeding the size of diamond nanoparticles is carried out by a beam of argon ions with an energy of 0.3–10 keV at a pressure of 5⋅10^-4…1⋅10^-2 Torr. Reactive ion etching is carried out in an argon atmosphere of purity of 99.999 %. Thickness of the photoresist pattern is 10–100 times the etching depth.

EFFECT: ensures obtaining a predetermined topology of a diamond coating with a low concentration of parasitic diamond crystallites in areas that do not require overgrowing.

3 cl, 3 dwg, 1 tbl, 1 ex