PROCESS OF FORMATION OF THIN FILMS ON SEMICONDUCTOR SUBSTRATE AND DEVICE FOR ITS IMPLEMENTATION Russian patent published in 1995 - IPC

FIELD: electronics. SUBSTANCE: process of formation of thin films on semiconductor substrate involves anchoring of substrate on rotary table provided with vacuum gripper, turn of substrate through 180 deg around horizontal axis and its lowering into vessel with applied fluid, rotation of substrate, its return into initial position and rotation of substrate with increased speed, immersion of substrate into vessel with formation of clearance between substrate and surface of fluid in vessel, feed of filtered fluid to be applied from below under pressure to surface of rotating substrate, rotation of table with substrate with increased speed before return into initial position. Used fluid is discharged from vessel into recycling system and is directed for repeat cycle of application of film through filter. Device for implementation of process includes vessel with fluid to be applied, rotary table with vacuum gripper for fixation of treated substrate provided with mechanism for turning through 180 deg around horizontal axis and with mechanism for vertical translation. Vessel for application of fluid houses application chamber and corrugated tank with drive for its compression in vertical direction which are separated by conical valve from each other. Outer surface of bottom part of case of application chamber is seat of valve. Valve proper is put on cylindrical spring anchored on bottom part of tank. On top valve ends with horizontal platform which diameter does not exceed that of treated substrate. Filter which inlet is coupled to volume of corrugated tank and which outlet is coupled to volume of application chamber through duct made in body of conical valve is anchored in body of valve. Application chamber is fitted with cylindrical or ball cover and with mechanism for its turning through 180 deg relative to application chamber. Space housing rotary table with vacuum gripper and drive to move table with treated substrate into application chamber is manufactured inside cover. Outer surface of cover is mated with upper surface of walls of application chamber. EFFECT: improved manufacturing technology. 2 cl