HIGH-VOLTAGE STRAIN SENSOR Russian patent published in 2009 - IPC H01L29/84 

FIELD: physics; conductors.

SUBSTANCE: invention relates to the technology of semiconductor devices, particularly to making strain sensors for mechanical quantities based on strain-sensitive semiconductor resistors. According to the invention, the strain sensor has an insulating layer coated base, consisting of a non-deformable part and an elastically deformable membrane, on which there is a Wheatstone bridge, made from semiconductor strain-sensitive resistors connected by wires, including a semiconductor layer, with contacts at its ends made from a metal layer, lying on part of the surface of the semiconductor and insulating layer. The strain sensor has an additional Wheatstone bridge, which is on the non-deformable part of the base. Wires and contacts are three-layered. Their first layer, which is on part of the surface of the semiconductor and insulating layer, is made from aluminium. The middle layer is made from an alloy of aluminium with nickel or cobalt, and the outer layer is made from nickel or cobalt.

EFFECT: increased accuracy and sensitivity of measurement, reduced measurement errors, lower level of intrinsic noise of the strain sensor, provision for fast measurement of pressure at sharp changes in ambient temperature, increased stability of electrical parametres in time and increased resistance to effect of aggressive media.

8 cl, 3 dwg