SEMICONDUCTOR RESISTOR Russian patent published in 2018 - IPC H01L29/84 

FIELD: electricity.

SUBSTANCE: resistor comprises an insulating layer formed on the substrate, a semiconductor layer, provided with contacts made in the form of a metal layer at the ends. The resistor is additionally provided with a lower buffer and an upper buffer layers. The lower buffer layer is located between the insulating layer and the semiconductor layer. The upper buffer layer is located on the semiconductor layer. The lower and upper buffer layers are made of samarium oxysulfide. The resulting structure is additionally coated with an outer protective layer.

EFFECT: application of the invention minimizes the degradation of parameters of semiconductor piezoresistive sensor at elevated operating temperatures and ensures the stability of the electric parameters.

6 cl, 1 dwg