SEMICONDUCTOR RESISTOR Russian patent published in 2018 - IPC H01L29/84 

FIELD: electricity.

SUBSTANCE: invention relates to the technique of semiconductor devices, in particular to the manufacture of thermo- and strain gages based on strain-sensitive semiconductor materials. Resistor includes an insulating layer formed on the substrate, over which a semiconductor layer is formed, provided at the ends with contacts made of metal layers. Contacts are made in four layers. First layer is located on the part of the semiconductor surface and on the part of the insulating layer and is made of aluminium. Second layer is made of Ni-Al intermetallic compound. Third layer of contact tracks is made of nickel. Fourth layer is made of intermetallic Ni-Al. This structure is further coated with an outer layer of a protective coating made of SiO₂.

EFFECT: use of the invention makes it possible to ensure the stability of electrical parameters and to increase resistance to elevated temperatures.

5 cl, 2 dwg