SEMICONDUCTOR RESISTOR Russian patent published in 2009 - IPC H01L29/84 

FIELD: physics; conductors.

SUBSTANCE: invention relates to the technology of semiconductor devices, particularly to making thermo- and tensoresistors, based on strain-sensitive semiconductor materials. According to the invention, the semiconductor resistor comprises an insulation layer on a substrate, a semiconductor layer in form of a 0.1-1.0 mcm thick band on the insulating layer, which has contacts at its ends, made in form of a metal layer, lying on part of the surface of the semiconductor layer and the insulating layer. The contacts are three-layered. The first layer, which lies on part of the surface of the semiconductor and the insulating layer, is made from aluminium. The middle layer is made from an alloy of aluminium with nickel or cobalt. The outer layer is made from nickel or cobalt.

EFFECT: increased sensitivity, reduced measurement errors, lower level of intrinsic noise of the semiconductor resistor, stability of electrical parametres and increased resistance to effect of aggressive media.

7 cl, 2 dwg