PROTECTIVE MICROWAVE DEVICE Russian patent published in 2014 - IPC H01P1/22 H02H3/00 

FIELD: radio engineering, communication.

SUBSTANCE: protective microwave device has a centre conductor, one end of which is meant for input of a microwave signal and the other for output, a transmission line section connected to said centre conductor, a semiconductor device in form of a Schottky-barrier field-effect transistor connected to the other end of the transmission line section, a resistor connected in parallel to the semiconductor device, a capacitor and an inductor; the transmission line section is in form of a section of a single transmission line whose length is equal to one eighth of the wavelength in the transmission line section at the centre frequency of the operating frequency band, and whose wave impedance is equal to twice the wave impedance of the centre conductor, wherein values of the capacitor C and inductor L and resistance of the resistor are selected in accordance with given relationships.

EFFECT: wider operating frequency band and reduced direct microwave losses while maintaining acceptable input power.

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