SHF PROTECTIVE DEVICE Russian patent published in 2014 - IPC H01P1/22 

FIELD: electricity.

SUBSTANCE: SHF protective device contains the central conductor, the first and second section of the transmission line, the first and second semiconductor devices, the first, second and third resistors and two inductance coils. Both sections of the transmission line are made as sections of the single transmission line, each having a length equal to one eighth of the wave length in the transmission line section within the central frequency of the service band and a wave impedance equal to the wave impedance of the central conductor, Schottky-barrier field-effect transistors are used as semiconductor devices, the first and third transistors are similar and have an impedance to the order higher than the wave impedance of the central conductor.

EFFECT: increase of permitted input power, expansion of the service band of frequency, reduction of SHF direct losses.

4 dwg