DEVICE FOR PLASMA TREATMENT Russian patent published in 2009 - IPC H01L21/3065 H05H1/46 

FIELD: physics, conductors.

SUBSTANCE: device for plasma treatment is related to devices for generation of technological plasma and may be used to perform the following processes - deposition, etching, oxidation, implantation (shallow layers), burning of organic masks on different substrates in the field of electronics, nanoelectronics, production of medical tools, sensor devices, etc. Plasma treatment device consists of reaction vacuum chamber with inputs of SHF plasma sources, number of which is not regulated, installed perpendicular to side walls, and heated or cooled pedestal for substrates installed in reaction vacuum chamber and having possibility of vertical displacement and possibility of electric shift relative to plasma. Outside the chamber above the place of substrates location, inductor of HF charge is installed on pedestal, besides chamber wall, in the point of its adjacency to inductor, is made of material transparent for HF electromagnet field.

EFFECT: introduction of new parametre of speeds and technological process homogeneity control due to variation of process control by recombination of active plasma components in the volume of reaction chamber.

1 dwg