FIELD: process engineering.
SUBSTANCE: invention relates to laser cutting of plates and can be used in microelectronics for cutting of diamond, carbide-silicon, silicon and other substrates wit device built there in. Proposed method involves the focusing of laser radiation on processed surface in atmosphere of gas mix containing fluorine compounds. Note here chemical reactions are initiated by both thermal processes of gas component dissociation and plasma formation in atmosphere of pure fluorine or pure anhydrous hydrogen fluoride at pressure of barometric to 1·• 10-2 Torr.
EFFECT: high-quality laser cutting.
1 dwg
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