METHOD FOR IDENTIFICATION OF HIGHER RELIABILITY TRANSISTORS Russian patent published in 2009 - IPC G01R31/26 

FIELD: electricity.

SUBSTANCE: invention is related to the field of electric engineering, in particular to production and operation of transistors, and may be used for identification of higher reliability transistors from batch in process of production, and also in incoming inspection at manufacturing plants of radio electronic equipment. Substance of invention consists in measurement of values of informative parametre - reverse current of emitter - before, after annealing, after action of electrostatic discharge pulses and after the second annealing. Besides several pulses of electrostatic discharge of both polarities with potential permissible as per technical conditions are sent to leads of tested transistors. Annealing is carried out at maximum permissible temperature of crystal. Transistors are identified on the basis of informative parametre value stability assessment.

EFFECT: shorter annealing, no exceeding of electrostatic discharge voltage.

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