METHOD OF SELECTIVE TEST OF RELIABILITY OF TRANSISTORS IN LOT Russian patent published in 2003 - IPC

FIELD: electrical engineering. SUBSTANCE: method can be recommended for reliability tests of transistors for criteria of resistance to electrostatic discharge and temperature prefiring and for increased authenticity of other testing and rejection procedures both in process of production of electronic hardware and in incoming control at manufacturing factories. According to proposed method any transistor can be subjected to action of the type of electrostatic discharge-prefiring and value of coefficient of change of informative parameter, for example, of reverse current of any junction of selected transistor is used to make decision on degree of reliability of transistors in lot. As distinct from analogs in correspondence with method pulses of electrostatic discharge with voltage twice as high as permissible potential set by specifications are fed to transistors, prefiring of flaws is carried out at temperature 25±10^°C in the course of 3-7 days and then at temperature 100-125 C in the course of one hour. EFFECT: simplified and accelerated process of rejection of transistors thanks to nondestructive selective test of their reliability, simplified processing of obtained results. 2 tbl