FIELD: microelectronics.
SUBSTANCE: method can be used for inspection of semiconductor devices. Value of back current of emitter is measured on base of representative sample after any effect of five electrostatic charge pulse in any 250 V until parametric failures appear. Stability to electrostatic charge is estimated on base of minimal and average of dangerous potential.
EFFECT: improved precision.
1 tbl
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Authors
Dates
2008-02-20—Published
2006-06-26—Filed