METHOD FOR CLEANING SILICON SUBSTRATE SURFACES Russian patent published in 2008 - IPC H01L21/306 

FIELD: semiconductor device manufacture; pre-heat cleaning of silicon substrate surfaces from organic and mechanical contaminants.

SUBSTANCE: proposed method for cleaning silicon substrates includes their double-stage treatment in two baths filled with two solutions: first bath is filled with solution of sulfuric acid H₂SO₄ and hydrogen peroxide H₂O₂ in H₂SO₄ : H₂O₂ = 10 : 1 proportion at temperature T = 125 °C; other bath is filled with solution of aqueous ammonia NH₄OH, hydrogen peroxide H₂O₂, and deionized water H₂O in proportion of NH₄OH : H₂O₂, : H₂O at temperature T = 65 °C. Resulting amount of dust particles is not over three.

EFFECT: ability of removing all organic and mechanical contaminants and impurities from silicon substrate surface, reduced substrate treatment time.

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