METHOD OF MAKING THIN CRYSTAL SILICON FILMS FOR SEMICONDUCTOR DEVICES Russian patent published in 2008 - IPC H01L21/20 

FIELD: electronics.

SUBSTANCE: invention pertains to the technology of microelectronic devices and solar cells, and can be used in making thin film transistors, as well as other silicon type devices on dielectric and silicon integrated microcircuits on glass and substrates made from polymer compounds. The method of making crystal silicon films with thickness less than 100 nm on glass for semiconductor devices involves cleaning glass substrate in a vacuum using weakly ionised nitrogen plasma, cleaning the surface in a vacuum using weakly ionised hydrogen plasma, vacuum-plasma deposition from the gas phase of silicon containing gases, formation of a thin film of silicon on a glass substrate. Before deposition of silicon, thin film metallic electrodes of the device are deposited. The electrodes are made from refractory metals or their alloys and are heated during formation of the silicon film, which leads to formation of a completely crystalline silicon film.

EFFECT: obtaining a thin crystal film of silicon with high quality material and high degree of uniformity when depositing on large substrates, lowering the cost of the process of making devices based on thin films.

6 cl, 8 dwg