METHOD FOR PRODUCING THIN MEMBRANES OF SILICON CARBIDE ON SILICON BY PYROLYSIS OF POLYMER MEMBRANES OBTAINED BY MOLECULAR LAYER PRECIPITATION Russian patent published in 2021 - IPC H01L21/18 

FIELD: chemistry.

SUBSTANCE: invention relates to the technology of producing membranes of silicon carbide on a silicon substrate. The invention comprises two-stage process. On the first stage, polymer is precipitated from a gas phase on a silicon substrate by molecular layer precipitation. On the second stage, pyrolysis of polymer is carried out at temperatures up to 1300°C in a vacuum (or an inert atmosphere), in the result of which a SiC layer is formed. High temperatures provide polymer carbonization with forming evenly distributed layer of carbon residue, which interacts with a silicon substrate at higher temperatures forming SiC.

EFFECT: molecular layer precipitation provides precise control of the thickness (up to 0.1 nm) and conformity of a polymer membrane, due to what it is possible to control the thickness of membrane of silicon carbide as a product of high-temperature pyrolysis of polymer on silicon.

1 cl, 4 dwg