METHOD FOR IMPROVING GROWTH AND ADHESION OF COPPER NANOFILMS ON SILICON SUBSTRATES USING MOLECULAR LAYER DEPOSITION TECHNOLOGY Russian patent published in 2023 - IPC H01L21/00 B82B1/00 

FIELD: nanotechnology.

SUBSTANCE: technology for improving adhesive strength and growth (nucleation) of copper nanofilms on a silicon substrate. The invention consists in a two-stage process, where the process of atomic layer deposition of aluminium oxide (Al₂O₃) from the gas phase onto a silicon substrate (natural silicon oxide layer) is carried out at the first stage. This is followed by molecular layer deposition of copper at the second stage using two precursors, one being an organometallic copper compound and the other being a reducing agent.

EFFECT: preliminary ALD of aluminium oxide followed by MLD of the copper film results in high adhesive strength of the copper nanofilm due to presence of a large number of hydroxyl groups on the surface of aluminium oxide, which ensure reactivity of the substrate surface with the precursor molecules for copper MLD, and also due to the amorphous nature of the aluminium oxide film resulting in the precursor molecules that may have a certain degree of penetration into the aluminium oxide film.

1 cl, 3 dwg