FIELD: physics.
SUBSTANCE: invention can be used as discrete devices, as well as a component when designing large and super large integrated circuits for various purposes. The polyresistor has a polysilicon area on a dielectric which insulates it from the substrate and components of the integrated circuit, high-alloyed areas of the resistor contacts, doped layer in the body of the resistor, obtained after metallisation, annealed at relatively low temperature (250°C to 850°C) and, therefore, with limited depth, which is less than thickness of the polysilicon layer.
EFFECT: proposed structure allows for obtaining large surface resistance of polyresistors with high accuracy.
6 dwg
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