FIELD: lighting.
SUBSTANCE: invention related lighting engineering and can be used in lighting devices design. Lighting diodes in every i-chain to be chosen by to their straight voltage, according to ratio (1): where - real straight voltage value of j-lighting diode from i-chain at current Ip and predetermined temperature value (Tp); UFM - straight UF voltage maximum accepted value for light diodes type, used in lighting device, at current Ip and temperature Tp; ΔUc - design value, real straight voltage value smaller then n·UFM- not less than ΔUc. All the stabilisers has maximum value of efficiency factor (EF) at output voltage value (Uout), satisfying correlation (2): Uout0 - ΔUp ≤ Uout0 + ΔUp, (2) , where Uout0 - stabiliser output voltage value, which equal to n·UFM-ΔUc; ΔUp ,where ΔUp predefined maximum accepted deviation real value Uout of stabiliser, at which it has maximum EF, from Uout0.
EFFECT: luminous efficiency increase of lighting device based on light diodes.
2 dwg
Title | Year | Author | Number |
---|---|---|---|
SYMMETRICAL HIGH-VALUE SEMICONDUCTOR PULSED VOLTAGE LIMITER CHARACTERIZED IN ENHANCED AVALANCHE BREAKDOWN ENERGY | 2004 |
|
RU2280295C1 |
RESISTIVE ELEMENT FOR HIGH-VOLTAGE SEMICONDUCTOR RESISTOR | 2008 |
|
RU2382438C1 |
METHOD OF MAKING RESISTIVE ELEMENTS OF SEMICONDUCTOR RESISTORS | 2007 |
|
RU2361317C1 |
METHOD FOR GROWTH OF EPITAXIAL STRUCTURE OF MONOCRYSTALLINE SILICON CARBIDE WITH LOW DENSITY OF EPITAXIAL DEFECTS | 2018 |
|
RU2691772C1 |
HIGH-VOLTAGE SYMMETRICAL SEMICONDUCTOR VOLTAGE LIMITER | 2002 |
|
RU2213392C1 |
LIGHTING DEVICE | 2012 |
|
RU2628014C2 |
LIGHTING DEVICE | 2011 |
|
RU2453012C1 |
THYRISTOR WITH "SOFT" REGENERATION | 2004 |
|
RU2279734C1 |
AC LIGHTING DEVICE WITH LOW LIGHT FLUX PULSATIONS | 2021 |
|
RU2787838C1 |
EMISSION LIGHT-EMITTING DIODE CELL | 2014 |
|
RU2562907C1 |
Authors
Dates
2010-01-10—Published
2008-04-10—Filed