METHOD OF MAKING RESISTIVE ELEMENTS OF SEMICONDUCTOR RESISTORS Russian patent published in 2009 - IPC H01L21/263 

FIELD: physics.

SUBSTANCE: invention relates to the technology of power semiconductor devices. In the method of making resistive elements of semiconductor resistors, at each i^th resistive element of the batch of resistors made, before exposure, the value of change in resistance is measured. After that the batch of resistors is divided into groups with a given interval of change in resistance, and, based on a relationship between radiation dose and resistance value with change of temperature within a given range, pre-established for the given type of resistor, the value of radiation dose is assigned for resistive elements of each k^th group. The resistive elements are then irradiated and annealed, and at each i^th resistive element, resistance value is re-measured. If that value does not satisfy a defined relationship, irradiation is repeated, the dose of which for each i^th resistive element of the k^th group is determined by a defined relationship.

EFFECT: increased percentage output of resistors, with change in resistance value within a given temperature range not exceeding a given value.

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