FIELD: electricity.
SUBSTANCE: in the process of silicon dioxide film creation, silicon dioxide film layer is formed on silicon substrate surface due to hydrogen (H2) and dry oxygen (O2) combustion in nitrogen (N2) environment at temperature of - 980±20°C and gas flows: N2=400 L/h; H2=65 L/h; O2=650±50 L/h, spread of film thickness is 3.5÷4.0%.
EFFECT: invention makes possible to obtain even and undisturbed silicon dioxide film without impurities at low temperatures.
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