PRODUCTION OF POWER TRANSISTOR GATE AREA Russian patent published in 2016 - IPC H01L21/225 

FIELD: process engineering.

SUBSTANCE: invention relates to production of semiconductor devices, particularly, to making of the power transistor gate area with boron diffusion from the solid planar source. Claimed process consists in forming of the diffusion silicon structure with application of the solid boron planar source. The spin-on stage is executed at 900°C and the following ratio of components O₂ = 70±0.5 l/h, N₂ = 950 l/h, H₂ = 10 l/h and spin-on time of 6 minutes. The drive-in stage is executed at 1250°C and gas flow rates O₂ = 70±0.5 l/h and N₂ = 950 l/h and drive-in time of 4 hours.

EFFECT: decreased temperature and time of the process, precise adjustment of diffusion ply depth of 7 mcm.