METHOD OF PHOSPHORUS DIFFUSION FROM HARD PLANAR SOURCE Russian patent published in 2009 - IPC H01L21/225 

FIELD: physics, semiconductors.

SUBSTANCE: invention is related to technology of semiconductor instruments, in particular, it may be used for deep diffusion of phosphorus in formation of diffusion silicon structures. Method of phosphorus diffusion from hard planar source includes formation of diffusion silicon structures with application of hard planar phosphorus source (HPPS). Process is carried out at temperature of 1000°C at the stage of infusion at the following ratio of components: O₂=37.8±0.5 l/hr; N₂=740 l/hr; H₂=7.5 l/hr and time equal to 60 minutes; at the stage of distillation process is carried out at temperature of 1150°C at the following flow rate of gases: O₂=37.8±0.5 l/hr; N₂=740 l/hr and time of distillation equal to 160 hours.

EFFECT: reduction of temperature and time required for process performance, provision of accurate control of diffusion layer depth, provision of depth of 160±20 mcm and increased percentage of yield output.