FIELD: physics, semiconductors.
SUBSTANCE: invention relates to testing MOS multiplexers. In method of detecting hidden defects in matrix or linear MOS multiplexers on a silicon wafer with suitable MOS multiplexers, windows are opened in the protective oxide layer to metallised areas of the sources of the MOS transistors and the substrate. An indium layer is deposited and an indium area which bridges all sources of the MOS transistors on the substrate is formed. Suitable chips are tested with detection of hidden defects.
EFFECT: invention simplifies the testing technique.
4 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD TO DETECT HIDDEN DEFECTS OF MATRIX OR LINEAR SILICON MOS MULTIPLEXOR | 2010 |
|
RU2415493C1 |
| METHOD OF HIDDEN FAULT LOCATION OF SILICON-GATE MOS MULTIPLEXERS | 2010 |
|
RU2433503C1 |
| METHOD TO DETECT HIDDEN ELECTRIC DEFECTS OF MATRIX OR LINEAR SILICON MOS MULTIPLEXORS | 2011 |
|
RU2474918C1 |
| METHOD OF DETECTING HIDDEN DEFECTS ON LSI READING ARRAYS | 2013 |
|
RU2523752C1 |
| METHOD FOR MANUFACTURING SELF-ALIGNING PLANAR TWO-GATE MOS TRANSISTOR ON SILICON-0N-INSULATOR SUBSTRATE | 2003 |
|
RU2312422C2 |
| METHOD OF MANUFACTURING MUTUALLY ADDING METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICES | 0 |
|
SU1023969A1 |
| METHOD TO MANUFACTURE NANOSIZED WIRE SILICON STRUCTURES | 2010 |
|
RU2435730C1 |
| 0 |
|
SU1785049A1 | |
| BIPOLAR CMOS DEVICE AND ITS MANUFACTURING PROCESS | 2003 |
|
RU2282268C2 |
| MOS TRANSISTOR MANUFACTURING PROCESS | 1991 |
|
RU2024107C1 |
