METHOD TO DETECT HIDDEN DEFECTS OF MATRIX OR LINEAR SILICON MOS MULTIPLEXOR Russian patent published in 2011 - IPC H01L21/66 

FIELD: electricity.

SUBSTANCE: in method to detect hidden defects of matrix or linear silicon MOS multiplexor, consisting in the fact that on silicon plate with good MOS multiplexors, windows are opened in protective layer of oxide to metallised sites of MOS transistor sources and substrate, a layer of indium is applied with thickness equal to height of indium columns, necessary to join MOS multiplexor with photosensitive element crystal pillars, a relief with height of 3…4 mcm is formed on a layer of indium in areas of future pillars, an area of indium is formed, which shunts all sources of MOS transistors to substrate, good crystals are inspected to detect hidden defects, indium pillars are formed with height required to join MOS multiplexor with photosensitive element crystal pillars.

EFFECT: method is simple and is a part of technological process of pillars making.

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