METHOD TO DETECT HIDDEN ELECTRIC DEFECTS OF MATRIX OR LINEAR SILICON MOS MULTIPLEXORS Russian patent published in 2013 - IPC H01L21/66 G01R31/26 

FIELD: electricity.

SUBSTANCE: in the method to detect hidden electric defects of matrix or linear silicon MOS multiplexors onto a silicon plate with good crystals of MOS multiplexors a layer of a protective oxide and a layer of a photoresist are applied. Contact windows are opened to metallised sites of MOS transistor sources, as well as a contact window to a substrate. A layer or layers of metal are applied. Photolithographic treatment is carried out onto a layer or layers of metal to establish a metal site. Plasma-chemical removal of a photoresist is carried out in oxygen plasma from the upper surface of the metal site and its periphery. Functioning of good MOS multiplexors is monitored with detection of hidden defects - short circuits of a source and a drain. A layer (layers) of metal are removed outside contact windows in organic dissolvents by the method of "explosion", leaving adhesion layers in the area of contact windows. Indium microcontacts are formed. Plates are cut into crystals.

EFFECT: simple and efficient method to test silicon MOS multiplexors in process of their manufacturing, in order to detect electric defects.

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