METHOD OF DETECTING HIDDEN DEFECTS ON LSI READING ARRAYS Russian patent published in 2014 - IPC H01L21/66 

FIELD: physics.

SUBSTANCE: method includes opening windows on a silicon wafer with non-defective reading LSI in the protective oxide layer to metal-coated areas of MOS transistor sources, depositing an indium layer, forming indium regions in form of bands insulated from each other and directed perpendicular to the drain buses which short-circuit MOS transistor sources with each other in each band, monitoring operation of a multiplexer to detect drains with hidden defects by short-circuiting the indium bands on the wafer and then forming indium microcontacts. Defects are searched for only within that band where leakage is detected.

EFFECT: shorter time for determining coordinates of a defect since there is no need to check all sources belonging to a given drain bus where the defect is detected.

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