PRESSURE SENSOR OF STRAIN GAUGE TYPE WITH THIN-FILM NANO- AND MICROELECTRICAL SYSTEM Russian patent published in 2013 - IPC G01L9/04 B82B1/00 

FIELD: instrument making.

SUBSTANCE: pressure sensor with a thin-film nano- and microelectromechanical system (NaMEMS) is designed for use when exposed to non-stationary temperatures and higher vibration accelerations. The pressure sensor of strain gauge type with a thin-film nano- and microelectromechanical system (NaMEMS) comprises a body, a NaMEMS installed in it, comprising a round membrane, arranged as a whole with a peripheral base, a heterogeneous structure from thin films of materials formed on it, where resistance strain gages are formed, arranged as identical square strain gauge elements connected by thin-film links of identical quantity. Strain gauge elements of the first pair of resistance strain gauges are arranged as symmetrical between each other relative to mutually perpendicular axes of a membrane, stretching via centres of resistance strain gauges, and symmetrical to appropriate strain gauge elements of the second pair of resistance strain gauges, relative to mutually perpendicular axes of the membrane, stretching via centres of contact sites, arranged symmetrically relative to mutually perpendicular axes of the membrane stretching via centres of resistance strain gauges. Distances between strain gauge elements of the first pair of resistance strain gauges are equal to each other and are equal to distances between strain gauge elements of the second pair of resistance strain gauges. Centres of all strain gage elements are arranged along a circumference, radius of which is defined in accordance with the appropriate ratio.

EFFECT: reduced error of measurements in pressure sensors of strain gauge type and also increased long-term stability and reduced non-linearity of a calibration characteristic.

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