HIGH PRECISION PRESSURE SENSOR BASED ON NANO- AND MICRO-ELECTROMECHANICAL SYSTEM WITH THIN-FILM TENSORESISTORS Russian patent published in 2011 - IPC G01L9/04 B82B1/00 

FIELD: physics.

SUBSTANCE: high precision pressure sensor based on a nano- and micro-electromechanical system with thin-film tensoresistors has a housing which accommodates a nano- and micro-electromechanical system (NMEMS), which consists of an elastic member - a membrane with a rigid centre embedded in a loop in a supporting base, on which a heterogeneous structure is formed from thin-film materials in which contact pads are formed. First radial tensoresistors are formed in the heterogeneous structure from identical tensoelements lying on one circle of the membrane and second radial tensoresistors are formed from identical tensoelements lying on a second circle of the membrane, connected by thin-film jumpers which are connected into a measurement bridge. Tensoelements of the first and second radial tensoresistors lie on circles whose radii are defined by corresponding relationships.

EFFECT: high accuracy owing to reduced nonlinearity of the measurement circuit of the sensor, as well as due to reduction of the difference in distance from the centre of the membrane to the tensoresistors connected in opposite arms of the bridge of the measurement circuit.

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