PRESSURE SENSOR WITH THIN-FILM TENSORESISTOR NANO- AND MICRO-ELECTROMECHANICAL SYSTEM Russian patent published in 2010 - IPC G01L9/04 B82B1/00 

FIELD: physics.

SUBSTANCE: pressure sensor with thin-film tensoresistor nano- and micro-electromechanical system has a housing in which there is a nano- and micro-electromechanical system (NMEMS) consisting of a membrane with a rigid centre embedded on the contour in the support base, a heterogeneous structure formed on the membrane from thin films of materials in which contact pads, first radial tensoresistors and second radial tensoresistors are formed, connected by thin-film jumpers connected in the measuring bridge. Ends of the first radial tensoresistors lie between the rigid centre and a circle whose radius r is defined by a corresponding relationship. Ends of the second radial tensoresistors lie between the support base and a circle whose radius r is also defined by a corresponding relationship.

EFFECT: higher accuracy, higher reliability and higher technological effectiveness of the pressure sensor.

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