PRESSURE SENSOR OF STRAIN GAUGE WITH THIN-FILM NANO- AND MICROELECTROMECHANICAL SYSTEM Russian patent published in 2010 - IPC G01L9/04 B82B3/00 

FIELD: instrument making.

SUBSTANCE: pressure sensor with thin-film nano- and microelectromechanical system (NandMEMS) comprises body, NandMEMS installed in it and consisting of round membrane rigidly embedded along contour, heterogeneous structure formed on it from thin films of materials. Strain gauges are formed in heterogeneous structure, which are made of identical strain gauge elements in the form of squares connected by thin-film links from low-resistance material, as well as circumferential and radial strain gauge resistors included into opposite arms of measurement bridge arranged as strain gauge elements arranged along circumference at membrane periphery, having identical shape and joined by thin-film links of identical number. Terminal conductors connect strain gauges with pressure seals. Thin-film links, which are used to connect strain gauge elements of circumferential and radial strain gauge resistors are partially closed with additional links. Characteristics of sensor design elements are aligned with corresponding ratio mentioned in the description.

EFFECT: reduced error of measurement under action of non-stationary ambient temperature and increased vibration accelerations due to reduction of total integral thermal EMF by optimisation of design elements characteristics ratio.

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