TENSORESISTIVE PRESSURE SENSOR WITH THIN-FILM NANO- AND MICRO-ELECTROMECHANICAL SYSTEM Russian patent published in 2012 - IPC G01L9/04 B82B1/00 

FIELD: physics.

SUBSTANCE: sensor has a housing (1) in which there is a nano- and micro-electromechanical system consisting of a membrane (2) which is integrated with the base (3). A heterogeneous structure (4) of thin films is formed on the membrane. Tensoresistors are formed in the structure (4) and lie on a circle on the periphery of the membrane. A cylindrical bushing (7) with a hole (8) is mounted on the base on the side of feeding the measured medium, symmetrically about the longitudinal axis of the sensor and said bushing lies inside the base with a gap from the membrane and the peripheral base in a region adjacent to the membrane. Elements of the first and the second measuring circuits, lying outside the housing, are placed in a common screen (9) made from material with high heat conductivity. Characteristics of structural components of the sensor are linked by a corresponding relationship.

EFFECT: reduced measurement error.

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