TENSORESISTOR PRESSURE SENSOR BASED ON NANO- AND MICRO-ELECTROMECHANICAL SYSTEM Russian patent published in 2010 - IPC G01L9/04 B81B7/02 

FIELD: physics.

SUBSTANCE: tensoresistor pressure sensor has a case, a circular membrane with a peripheral base, circular and radial tensoresistors connected by thin-film jumpers made from low-resistivity material and connected accordingly in opposite arms of the measurement bridge, where the said tensoresistors are made in form of tensoelements of the same shape connected by the same number of thin-film jumpers and lie on a circle on the periphery of the membrane. Lead wires connect the tensoresistors and sealed leads. The thin-film jumpers connecting the tensoelements of circular and radial tensoresistors are partially closed by extra jumpers. The diametre of the membrane and the distance between the sealed leads are as minimal as possible. The sealed leads or their parts directly in contact with lead wires and wires are made from materials which have the minimum possible difference in thermoelectric coefficient with materials of the lead wires and wires. The membrane, peripheral base, case, lead wires, sealed leads, wires or their parts lying symmetrically about their longitudinal axes are made from materials with maximum possible coefficient of thermal conductivity.

EFFECT: reduced measurement errors at non-steady ambient temperature and high vibration acceleration owing to reduced difference in temperature of tensoresistors and thermoelectric non-uniformities through reduction of distance and increasing thermal conductivity between tensoresistors.

3 cl, 4 dwg