PRESSURE SENSOR OF STRAIN GAUGE TYPE WITH A THIN FILM NANO- AND MICROELECTROMECHANICAL SYSTEM Russian patent published in 2018 - IPC G01L9/04 

FIELD: measuring equipment.

SUBSTANCE: use to create a pressure sensor with a thin-film nano- and microelectromechanical system. Essence of the invention lies in the fact that the pressure sensor with a thin-film nano- and microelectromechanical system (NaMEMS) contains a body installed in it NaMEMS consisting of an elastic member – a circular membrane, made in one piece with a peripheral base, a heterogeneous structure of thin films of materials formed on it, where resisctance strain gages are formed, engaged respectively in the opposite arms of a measurement bridge,and receive the deformation of a different sign from the measured pressure, arranges as identical strain elements connected by thin-film bridges of identical quantity, located along the circumference at the periphery of the membrane, measuring and supplying electrical circuits connecting the thin film NaMEMS to a sensor output, fixed and located inside the peripheral base with a gap relative to the membrane and the peripheral base in the region adjacent to the membrane, cylindrical bushing with a cylindrical bore along its axis, a screw with an outer diameter is placed in the bore of the cylindrical bushing, providing a tight fixation of the screw in the bushing with the formation of a screw channel for a medium to be measured, limited by an inner surface of the cylindrical bushing and an outer surface of the screw, made in the form of a single-lead trapezoidal thread with a pitch determined by a certain ratio.

EFFECT: ensuring the possibility of reducing the measurement error of the sensor.

1 cl, 1 dwg