METHOD TO MANUFACTURE STRAIN GAUGE PRESSURE SENSOR BASED ON THIN-FILM NANO- AND MICROELECTROMECHANICAL SYSTEM Russian patent published in 2015 - IPC G01L9/04 B82B1/00 

FIELD: measurement equipment.

SUBSTANCE: method to manufacture a strain gauge pressure sensor consists in polishing of membrane surface, formation of a dielectric film and strain gauge elements on it with low-resistance links and contact sites between them, using a template of a strain gauge sensitive layer in the form of strips, attachment of output conductors to contact sites in areas remote from strips of sections, connection of a recorder to the output of nano- and microelectromechanical systems (N&MEMS), energising of N&MEMS voltage, development of a normalized non-stationary field of temperatures and temperature deformations symmetrical relative to the centre of the membrane on the membrane. The non-stationary field of temperatures and temperature deformations is recorded on the recorder of the output signal of N&MEMS during impact at the membrane. They compare the produced output signal of the tested N&MEMS according to the amplitude of spectral components with the similar signal of the reference N&MEMS. If differences of amplitudes of output signals or amplitudes of spectral components of output signals do not exceed limit permissible values, which are not taken as criteria of time stability, this assembly is forwarded to subsequent operations.

EFFECT: increased time stability, resource, service life, reduced error under impact of non-stationary temperatures and increased vibration accelerations.

2 cl, 2 dwg