METHOD OF PRODUCING HIGH-STABLE TENSORESISTOR PRESSURE SENSOR BASED ON THIN-FILM NANO- AND MICRO-ELECTROMECHANICAL SYSTEM Russian patent published in 2016 - IPC G01L9/00 H01L41/22 

FIELD: measuring equipment.

SUBSTANCE: invention relates to measurement equipment, particularly to tensoresistor pressure sensors based on thin-film nano- and micro-electromechanical system (NAMEMS) with a bridge measurement circuit, intended for use in systems of control, monitoring and diagnostics of objects of long-term operation. Method of producing high-stable tensoresistor pressure sensor based on thin-film nano- and micro-electromechanical system (NAMEMS) involves polishing the membrane surface, making a dielectric film on it and strain elements with low-resistance jumpers and contact pads there between using a strain-sensitive layer template. Herewith measurements of strain gauges resistance are performed while affecting on them with test temperatures, temperature coefficients of the strain gauges resistance within the range of the affecting temperatures are determined. Then the stability criterion is calculated as per the measurements and compared with test values. Determined are, respectively, the first and the second criteria of stability as per ratios ψ_τ01j=|(α_2j+α_4j)-(α_1j+α_3j)|, ψ_ij02(α)=α_ij, where α_1j, α_2j, α_3j, α_4j, are temperature coefficients of resistance of the 1st, 2nd, 3rd, 4th resistive strain gauges of the NAMEMS within the j-th temperature range; α_ij is the temperature coefficient of resistance of the i-th resistive strain gauge of the NAMEMS within the j-th temperature range. Besides, strain elements, jumpers, contact pads and lead wires are connected into a bridge measurement circuit and the third criteria of stability are determined as per ratios ψ_kj03(α)=α_kj, where α_kj is the temperature resistance coefficient of the k-th diagonal of the bridge measurement circuit of the NAMEMS within the j-th temperature range. If the value of the first, the second and the third criteria are within the specified ranges, which are determined experimentally by statistical data for a specific gauge, this assembly is transferred to next operations.

EFFECT: technical result is upgraded time and temperature stability, longer operation and service life, as well as reduced time of getting ready and errors under variable temperatures and high vibration acceleration conditions, the possibility to use the power diagonal as the temperature sensor of the resistive strain gauges of intellectual pressure sensors based on the NAMEMS.

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