METHOD OF FIELD CMOS TRANSISTOR FORMATION USING DIELECTRICS BASED ON METAL OXIDES WITH HIGH INDUCTIVE CAPACITY RATE AND METAL GATES, AND STRUCTURE OF FIELD CMOS TRANSISTOR Russian patent published in 2010 - IPC H01L21/8238 H01L27/92 B82B1/00 B82B3/00 

FIELD: electricity.

SUBSTANCE: method of field CMOS transistor formation involves precipitation of 1-10 nm thick dielectric layer with high inductive capacity rate on semiconductor substrate and application of 0.15-0.41 nm thick antimony (Sb) layer onto the dielectric layer. Metal gate is made of nickel silicide (NiSi) of 300-3000 nm thickness. Semiconductor substrate can be made of silicon (Si) with 0.1-1 nm thick SiO₂ sublayer on it. Also invention claims structure manufactured by the described method.

EFFECT: control of field n-type transistor switching voltage, reduction of switching voltage of field n-type transistor with switching voltage stability increasing.

14 cl, 3 dwg, 1 ex