METHOD OF PRODUCING SCHOTTKY SILICON DIODES Russian patent published in 2019 - IPC H01L29/872 

FIELD: electrical engineering.

SUBSTANCE: proposed method of making Schottky silicon diodes relates to microelectronics and can be used in making Schottky silicon diodes based on platinum-nickel barrier. Method of making Schottky silicon diodes involves depositing a layer of platinum, a nickel layer into oxide windows on the surface of silicon semiconductor plates, heat treatment of the obtained structure to form platinum and nickel silicides, removing platinum and nickel layer residues unreacted with silicon, applying a barrier layer, applying a metallization layer on the working side of the plates and forming a metallization topology on the working side of the plates and applying metallization on the back side of the plates, characterized by that heat treatment is carried out by irradiation with photons of light perpendicular to the working surface of plates in a vacuum with pressure of not more than 1,300 Pa at temperature 470±5 °C for 5–15 minutes.

EFFECT: technical result consists in improvement of Schottky contact barrier height adjustment range.

1 cl, 3 dwg, 1 tbl